Takehiko Fujita
20Patents
5h-index
22Co-inventors
65Inventor score
Filing activity: Mar 19, 2002 → Sep 12, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7648895B2 | Vertical CVD apparatus for forming silicon-germanium film | Chemistry; Metallurgy | 321 | Active |
| US7906168B2 | Film formation method and apparatus for forming silicon oxide film | Electricity | 48 | Active |
| US7179334B2 | System and method for performing semiconductor processing on substrate being processed | Emerging Cross-Sectional Technologies | 7 | Expired |
| US7494943B2 | Method for using film formation apparatus | Emerging Cross-Sectional Technologies | 6 | Active |
| US8980679B2 | Apparatus and methods for forming phase change layer and method of manufacturing phase change memory device | Electricity | 5 | Active |
| US7795158B2 | Oxidation method and apparatus for semiconductor process | Electricity | 4 | Active |
| US7273818B2 | Film formation method and apparatus for semiconductor process | Electricity | 4 | Expired |
| US7938080B2 | Method for using film formation apparatus | Emerging Cross-Sectional Technologies | 4 | Active |
| US10193016B2 | III-nitride semiconductor light emitting device and method of producing the same | Electricity | 4 | Active |
| US10147842B2 | Method of producing III nitride semiconductor light-emitting device | Performing Operations; Transporting | 3 | Active |
| US7211514B2 | Heat-processing method for semiconductor process under a vacuum pressure | Chemistry; Metallurgy | 2 | Expired |
| US9882088B2 | III nitride semiconductor light-emitting device | Electricity | 2 | Active |
| US10283671B2 | Method of producing III nitride semiconductor light-emitting device | Performing Operations; Transporting | 2 | Active |
| US8168270B2 | Film formation method and apparatus for semiconductor process | Chemistry; Metallurgy | 1 | Active |
| US11024769B2 | Group III nitride semiconductor light-emitting element and method of manufacturing same | Electricity | 0 | Active |
| US10062806B2 | Method of producing III nitride semiconductor light-emitting device and III nitride semiconductor light-emitting device | Electricity | 0 | Active |
| US10991850B2 | Group III nitride semiconductor light-emitting element and method of manufacturing same | General | 0 | Revoked |
| US8153451B2 | System and method for performing semiconductor processing on target substrate | Emerging Cross-Sectional Technologies | 0 | Active |
| US8124181B2 | Oxidation method providing parallel gas flow over substrates in a semiconductor process | Electricity | 0 | Active |
| US10573783B2 | Group III nitride semiconductor light-emitting element and method of manufacturing same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.