Optoelectronic device with improved reflectivity

US10062808B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• ALEDIA · FR

Inventors

• Bérangère Hyot · Eybens, FR
• Philippe Gilet · Amilly, FR

Key dates

• Filing date: Jun 25, 2014
• Grant date: Aug 28, 2018
• Expiry date: Jun 25, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/841

Abstract

The invention concerns an optoelectronic device (40) comprising: a substrate (14); a first layer (42) covering the substrate, the first layer having a thickness greater than or equal to 15 nm and comprising a first material having an extinction coefficient greater than or equal to 3 for any wavelength between 380 and 650 nm; a second layer (18) covering and in contact with the first layer, the second layer having a thickness less than or equal to 20 nm and comprising a second material having a refraction index of between 1 and 3 and an extinction coefficient less than or equal to 1.5 or any wavelength between 380 and 650 nm; and conical or frustoconical wire semiconductor elements (24) each having a light-emitting diode stack (DEL), being in contact with the second layer.