ALEDIA
🏢 View company profile →115Patents
114Active
115Granted
58Portfolio score
Filing activity: Oct 10, 2013 → Sep 30, 2024
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10050080B2 | Optoelectronic device and method for manufacturing same | Electricity | 10 | Active |
| US9537050B2 | Optoelectronic device and method for manufacturing same | Emerging Cross-Sectional Technologies | 8 | Active |
| US9847446B2 | Electroluminescent device with integrated sensor and method for controlling the emission of the device | Electricity | 6 | Active |
| US9960205B2 | Optoelectronic device comprising light-emitting diodes | Electricity | 5 | Active |
| US9854632B2 | Optoelectronic circuit with low-flicker light-emitting diodes | Electricity | 4 | Active |
| US9601543B2 | Optoelectronic device comprising light-emitting diodes with improved light extraction | Electricity | 4 | Active |
| US10084012B2 | Optoelectronic device with light-emitting diodes | Electricity | 4 | Active |
| US10734442B2 | Optoelectronic device with light-emitting diodes | Electricity | 3 | Active |
| US9299882B2 | Optimised method for producing electroluminescent nanowires | Electricity | 3 | Active |
| US10403787B2 | Optoelectronic device comprising three-dimensional semiconductor structures in an axial configuration | Electricity | 3 | Active |
| US10651341B2 | Optoelectronic device and method for manufacturing same | Emerging Cross-Sectional Technologies | 3 | Active |
| US10424692B2 | Optoelectronic device comprising three-dimensional electroluminescent diodes emitting at different wavelengths | Emerging Cross-Sectional Technologies | 3 | Active |
| US10535709B2 | Optoelectronic device with light-emitting diodes | Electricity | 3 | Active |
| US10211365B2 | Method for producing optoelectronic devices comprising light-emitting diodes | Electricity | 3 | Active |
| US9899566B2 | Optoelectronic device comprising microwires or nanowires | Emerging Cross-Sectional Technologies | 2 | Active |
| US10923528B2 | Optoelectronic device comprising pixels with improved contrast and brightness | Electricity | 2 | Active |
| US9793431B2 | Optoelectronic device with improved light extraction efficiency | Electricity | 2 | Active |
| US10636653B2 | Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps | Electricity | 2 | Active |
| US11063177B2 | Process for producing adjacent chips comprising LED wires and device obtained by the process | Electricity | 2 | Active |
| US11489088B2 | Method for manufacturing an optoelectronic device with self-aligning light confinement walls | Electricity | 2 | Active |
| US9991342B2 | Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device | Emerging Cross-Sectional Technologies | 2 | Active |
| US10418506B2 | Light-emitting device with integrated light sensor | Electricity | 2 | Active |
| US10453991B2 | Light-emitting device comprising active nanowires and contact nanowires and method of fabrication | Electricity | 1 | Active |
| US11527685B2 | Emitting devices, associated display screen and methods for fabricating an emitting device | Electricity | 1 | Active |
| US10510535B2 | Optoelectronic device comprising three-dimensional semiconductor elements, and method for manufacturing said device | Emerging Cross-Sectional Technologies | 1 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.