Optoelectronic device comprising light-emitting diodes with improved light extraction
US10062818B2 · kind B2 · utility
1Cited by
1References
24Claims
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Key dates
| Filing date | Feb 7, 2017 |
| Grant date | Aug 28, 2018 |
| Priority date | — |
| Expiry date | Feb 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/855
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.