Microelectromechanical pressure sensor including reference capacitor
US10065851B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 20, 2011 |
| Grant date | Sep 4, 2018 |
| Priority date | — |
| Expiry date | Apr 7, 2034 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2207/012
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
This document discusses, among other things, an apparatus including a silicon die including a vibratory diaphragm, the die having a silicon die top opposite a silicon die bottom, with a top silicon die port extending from the silicon die top through the silicon die to a top of the vibratory diaphragm, and with a bottom silicon die port extending from the silicon die bottom to a bottom of the vibratory diaphragm, wherein the bottom silicon die port has a cross sectional area that is larger than a cross-sectional area of the top silicon die port, a capacitor electrode disposed along a bottom of the silicon die, across the bottom silicon die port, the capacitor electrode including a first signal generation portion that is coextensive with the top silicon die port, and a second signal generation portion surrounding the first portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.