Poly-crystalline silicon ingot having a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom
US10065863B2 · kind B2 · utility
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Key dates
| Filing date | May 1, 2017 |
| Grant date | Sep 4, 2018 |
| Priority date | — |
| Expiry date | May 1, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/259
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A poly-crystalline silicon ingot having a bottom and defining a vertical direction includes a plurality of silicon grains grown in the vertical direction, in which the plurality of the silicon grains have at least three crystal orientations; and a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom, wherein the poly-crystalline silicon ingot has a defect density at a height ranging from about 150 mm to about 250 mm of the poly-crystalline silicon ingot that is less than 15%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.