Inventor · Hsinchu, TW

Cheng-Jui Yang

12Patents

2h-index

31Co-inventors

54Inventor score

Filing activity: Aug 6, 1999 → Jan 6, 2022

Most-cited inventions

Patent	Title	Area	Cited by	Status
US6426016B1	Method for etching passivation layers and antireflective layer on a substrate	Electricity	6	Expired
US10236216B2	Method for manufacturing a semiconductor device having a fin located on a substrate	Electricity	2	Active
US9637391B2	Crystalline silicon ingot including nucleation promotion layer	Emerging Cross-Sectional Technologies	1	Active
US9493357B2	Method of fabricating crystalline silicon ingot including nucleation promotion layer	Emerging Cross-Sectional Technologies	1	Active
US10087080B2	Methods of fabricating a poly-crystalline silcon ingot from a nucleation promotion layer comprised of chips and chunks of silicon-containing particles	Emerging Cross-Sectional Technologies	0	Active
US10510830B2	N-type polysilicon crystal, manufacturing method thereof, and N-type polysilicon wafer	Emerging Cross-Sectional Technologies	0	Active
US10825940B2	Polycrystalline silicon column and polycrystalline silicon wafer	Emerging Cross-Sectional Technologies	0	Active
US10138572B2	Crystalline silicon ingot and method of fabricating the same	Chemistry; Metallurgy	0	Active
US9315918B2	Crystalline silicon ingot and method of fabricating the same	Chemistry; Metallurgy	0	Active
US10065863B2	Poly-crystalline silicon ingot having a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom	Emerging Cross-Sectional Technologies	0	Active
US10297702B2	Polycrystalline silicon column and polycrystalline silicon wafer	Emerging Cross-Sectional Technologies	0	Active
US11971365B2	Wafer processing system and rework method thereof	Electricity	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.