Isoelectronic surfactant induced sublattice disordering in optoelectronic devices
US10066318B2 · kind B2 · utility
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Key dates
| Filing date | Jul 19, 2017 |
| Grant date | Sep 4, 2018 |
| Priority date | — |
| Expiry date | Jul 19, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of disordering a layer of an optoelectronic device including; growing a plurality of lower layers; introducing an isoelectronic surfactant; growing a layer; allowing the surfactant to desorb; and growing subsequent layers all performed at a low pressure of 25 torr.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.