James H. Ermer
19Patents
11h-index
24Co-inventors
72Inventor score
Filing activity: Dec 6, 1984 → Jul 19, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4915745A | Thin film solar cell and method of making | Emerging Cross-Sectional Technologies | 173 | Expired |
| US4798660A | Method for forming Cu In Se.sub.2 films | Emerging Cross-Sectional Technologies | 167 | Expired |
| US4611091A | CuInSe.sub.2 thin film solar cell with thin CdS and transparent window layer | Emerging Cross-Sectional Technologies | 129 | Expired |
| US5045409A | Process for making thin film solar cell | Emerging Cross-Sectional Technologies | 126 | Expired |
| US7122734B2 | Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers | Emerging Cross-Sectional Technologies | 56 | Expired |
| US6255580A | Bilayer passivation structure for photovoltaic cells | Emerging Cross-Sectional Technologies | 52 | Expired |
| US7119271B2 | Wide-bandgap, lattice-mismatched window layer for a solar conversion device | Emerging Cross-Sectional Technologies | 52 | Expired |
| US7812249B2 | Multijunction photovoltaic cell grown on high-miscut-angle substrate | Emerging Cross-Sectional Technologies | 39 | Active |
| US6150603A | Bilayer passivation structure for photovoltaic cells | Emerging Cross-Sectional Technologies | 33 | Expired |
| US6380601B1 | Multilayer semiconductor structure with phosphide-passivated germanium substrate | Emerging Cross-Sectional Technologies | 28 | Expired |
| US7126052B2 | Isoelectronic surfactant induced sublattice disordering in optoelectronic devices | Emerging Cross-Sectional Technologies | 23 | Expired |
| US6586669B2 | Lattice-matched semiconductor materials for use in electronic or optoelectronic devices | Emerging Cross-Sectional Technologies | 11 | Expired |
| US7626116B2 | Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers | Emerging Cross-Sectional Technologies | 2 | Expired |
| US9863890B2 | Solar cell testing apparatus and method | Emerging Cross-Sectional Technologies | 1 | Active |
| US10066318B2 | Isoelectronic surfactant induced sublattice disordering in optoelectronic devices | Emerging Cross-Sectional Technologies | 0 | Active |
| US8846134B2 | Isoelectronic surfactant induced sublattice disordering in optoelectronic devices | Emerging Cross-Sectional Technologies | 0 | Active |
| US7687386B2 | Method of forming a semiconductor structure having metal migration semiconductor barrier layers | Emerging Cross-Sectional Technologies | 0 | Active |
| US7202542B2 | Semiconductor structure with metal migration semiconductor barrier layers and method of forming the same | Emerging Cross-Sectional Technologies | 0 | Expired |
| US9745668B2 | Isoelectronic surfactant induced sublattice disordering in optoelectronic devices | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.