Image sensor and method for fabricating the same
US10068937B2 · kind B2 · utility
2Cited by
4References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2016 |
| Grant date | Sep 4, 2018 |
| Priority date | — |
| Expiry date | Jul 25, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This technology relates to an image sensor. The image sensor may include a substrate including a photoelectric conversion element; a pillar formed over the photoelectric conversion element and having a concave-convex sidewall; a channel film formed along a surface of the pillar and for having at least one end coupled to the photoelectric conversion element; and a transfer gate formed over the channel film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.