Stacked image sensor pixel cell with dynamic range enhancement and selectable shutter modes and in-pixel CDS
US10070081B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2017 |
| Grant date | Sep 4, 2018 |
| Priority date | — |
| Expiry date | Aug 16, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N2209/045
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel cell has a photodiode, a transfer transistor, a reset transistor, a dynamic range enhancement capacitor, a capacitor control transistor, an amplifier transistor in a source follower configuration and a rolling shutter row select transistor and a readout circuit block. The photodiode, a transfer transistor, a reset transistor, dynamic range enhancement capacitor, capacitor control transistor, amplifier transistor and rolling shutter row select transistor are disposed within a first substrate of a first semiconductor chip for accumulating an image charge in response to light incident upon the photodiode. The readout circuit block may be partially disposed within a second substrate of a second semiconductor chip and partially disposed within the first substrate wherein the readout circuit block comprises optionally selectable rolling shutter and global shutter readout modes through the use of computer programmable digital register settings. The global shutter readout mode provides in-pixel correlated double sampling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.