Stacked image sensor pixel cell with selectable shutter modes and in-pixel CDS
US10070090B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2017 |
| Grant date | Sep 4, 2018 |
| Priority date | — |
| Expiry date | Jul 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel cell has a photodiode, a transfer transistor, a reset transistor, an amplifier transistor and a readout circuit block. The photodiode, transfer transistor, reset transistor and amplifier transistor are disposed within a first substrate of a first semiconductor chip for accumulating an image charge in response to light incident upon the photodiode and converting the image charge to an image signal. The readout circuit block is disposed within a second substrate of a second semiconductor chip and the readout circuit block comprises optionally selectable rolling shutter and global shutter readout modes through the use of computer programmable digital register settings. The global shutter readout mode provides in-pixel correlated double sampling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.