Semiconductor method of protecting wafer from bevel contamination
US10073347B1 · kind B1 · utility
8Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2017 |
| Grant date | Sep 11, 2018 |
| Priority date | — |
| Expiry date | Aug 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6715
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure provides a method that includes coating an edge portion of a wafer by a first chemical solution including a chemical mixture of an acid-labile group, a solubility control unit and a thermal acid generator; curing the first chemical solution to form a first protecting layer on the edge portion of the wafer; coating a resist layer on a front surface of the wafer; removing the first protecting layer by a first removing solution; and performing an exposing process to the resist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.