Compact non-volatile memory device
US10074429B2 · kind B2 · utility
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4References
19Claims
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Key dates
| Filing date | Feb 13, 2018 |
| Grant date | Sep 11, 2018 |
| Priority date | — |
| Expiry date | Feb 13, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory cell includes a selection transistor having an insulated selection gate embedded in a semiconducting substrate region. A semiconducting source region contacts a lower part of the insulated selection gate. A state transistor includes a floating gate having an insulated part embedded in the substrate region above an upper part of the insulated selection gate, a semiconducting drain region, and a control gate insulated from the floating gate and located partially above the floating gate. The source region, the drain region, the substrate region, and the control gate are individually polarizable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.