Julien Delalleau
33Patents
3h-index
17Co-inventors
56Inventor score
Filing activity: Jun 3, 2010 → Jun 15, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9224482B2 | Hot-carrier injection programmable memory and method of programming such a memory | Electricity | 9 | Active |
| US9406686B2 | Memory cell comprising non-self-aligned horizontal and vertical control gates | Electricity | 4 | Active |
| US10128314B2 | Vertical bipolar transistor | Electricity | 3 | Active |
| US10763213B2 | Integrated circuit having a hidden shared contact | Electricity | 3 | Active |
| US9543311B2 | Vertical memory cell with non-self-aligned floating drain-source implant | Electricity | 3 | Active |
| US9559297B2 | Vertical transistor for resistive memory | Electricity | 2 | Active |
| US9941369B2 | Memory cell comprising non-self-aligned horizontal and vertical control gates | Electricity | 2 | Active |
| US9876122B2 | Vertical memory cell with non-self-aligned floating drain-source implant | Electricity | 2 | Active |
| US9922712B2 | Compact non-volatile memory device | Physics | 2 | Active |
| US10403730B2 | Memory cell comprising non-self-aligned horizontal and vertical control gates | Electricity | 1 | Active |
| US8410661B2 | Method of generating electrical energy in an integrated circuit, corresponding integrated circuit and method of fabrication | Emerging Cross-Sectional Technologies | 1 | Active |
| US10714583B2 | MOS transistor with reduced hump effect | Electricity | 1 | Active |
| US9978847B2 | Method for producing a high-voltage transistor with reduced footprint, and corresponding integrated circuit | Electricity | 1 | Active |
| US10804222B2 | Integrated circuit containing a decoy structure formed by an electrically insulated silicide sector | Electricity | 0 | Active |
| US10686046B2 | Memory cell comprising non-self-aligned horizontal and vertical control gates | Electricity | 0 | Active |
| US8549719B2 | Method of generating electrical energy in an integrated circuit, corresponding integrated circuit and method of fabrication | Emerging Cross-Sectional Technologies | 0 | Active |
| US11581270B2 | Integrated circuit containing a decoy structure | Electricity | 0 | Active |
| US10930351B2 | Compact non-volatile memory device | Physics | 0 | Active |
| US9570513B2 | Vertical bipolar transistor | Electricity | 0 | Active |
| US10074429B2 | Compact non-volatile memory device | Physics | 0 | Active |
| US9425239B2 | Vertical transistor for resistive memory | Electricity | 0 | Active |
| US11424342B2 | Fabrication process comprising an operation of defining an effective channel length for MOSFET transistors | Electricity | 0 | Active |
| US12057513B2 | Integrated circuit including a capacitive element and corresponding manufacturing method | Electricity | 0 | Active |
| US10797158B2 | Transistor comprising a lengthened gate | Electricity | 0 | Active |
| US10192999B2 | Vertical memory cell with non-self-aligned floating drain-source implant | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.