Deep trench isolation for RF devices on SOI

US10074650B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• Herb He Huang · Shanghai, CN
• Haiting Li · Beijing, CN
• Xingcheng Jin · Shanghai, CN
• Xinxue Wang · Shanghai, CN
• Hongbo Zhao · Nanjing, CN
• Fucheng Chen · Shanghai, CN
• Yanghui Xiang · Shanghai, CN

Key dates

• Filing date: May 3, 2016
• Grant date: Sep 11, 2018
• Expiry date: May 3, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a silicon-on-insulator (SOI) substrate having a stack of a first semiconductor substrate, a buried insulating layer and a second semiconductor substrate formed in a first region and a deep trench isolation disposed in a second region. The semiconductor device also includes a plurality of transistors on the second semiconductor substrate, a deep trench isolation having a bottom at a surface of the first semiconductor substrate in the second region, the deep trench isolation exposing a sidewall of the second semiconductor substrate and a sidewall of the buried insulating layer, and a dielectric capping layer filling the deep trench isolation and covering the plurality of transistors on the second semiconductor substrate.