Xinxue Wang
4Patents
1h-index
8Co-inventors
30Inventor score
Filing activity: Dec 8, 2014 → Jun 26, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9349748B2 | Method for forming deep trench isolation for RF devices on SOI | Electricity | 1 | Active |
| US10074650B2 | Deep trench isolation for RF devices on SOI | Electricity | 0 | Active |
| US10715942B2 | Microphone and manufacture thereof | Electricity | 0 | Active |
| US9630833B2 | Method to improve cantilever process performance | Performing Operations; Transporting | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.