Non-volatile SRAM memory cell and non-volatile semiconductor storage device
US10074658B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2016 |
| Grant date | Sep 11, 2018 |
| Priority date | — |
| Expiry date | Mar 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile SRAM memory cell and a non-volatile semiconductor memory device capable of programming SRAM data in a SRAM to a non-volatile memory unit through fast operation of the SRAM are disclosed. A non-volatile semiconductor memory device can achieve reduction in a voltage necessary for a programming operation to program SRAM data to the non-volatile memory unit. Thus, a first access transistor, a second access transistor, a first load transistor, a second load transistor, a first drive transistor, and a second drive transistor included in the SRAM connected with the non-volatile memory unit can each include a gate insulating film having a thickness less than or equal to 4 nm, which achieves fast operation of the SRAM at a lower power supply voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.