Yasuhiro Taniguchi
63Patents
13h-index
54Co-inventors
87Inventor score
Filing activity: Feb 28, 1997 → Aug 14, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7095432B2 | Image processing apparatus and method | Physics | 130 | Expired |
| US6569742B1 | Method of manufacturing semiconductor integrated circuit device having silicide layers | Emerging Cross-Sectional Technologies | 69 | Expired |
| US5991428A | Moving object detection apparatus and method | Physics | 40 | Expired |
| US6298143A | Moving target detecting system and moving target detecting method | Physics | 31 | Expired |
| US6456730B1 | Moving object detection apparatus and method | Physics | 26 | Expired |
| US6376316B2 | Method for manufacturing semiconductor integrated circuit device having deposited layer for gate insulation | Electricity | 25 | Expired |
| US6049875A | Security apparatus and method | Physics | 20 | Expired |
| US6211003A | Semiconductor integrated circuit device and process for manufacturing the same | Electricity | 20 | Expired |
| US9318196B1 | Non-volatile semiconductor memory device | Physics | 19 | Active |
| US7166893B2 | Semiconductor integrated circuit device | Emerging Cross-Sectional Technologies | 19 | Expired |
| US6617632B2 | Semiconductor device and a method of manufacturing the same | Electricity | 19 | Expired |
| US7844921B2 | Interface apparatus and interface method | Physics | 14 | Active |
| US6646313B2 | Semiconductor integrated circuit device and having deposited layer for gate insulation | Electricity | 13 | Expired |
| US6387744B2 | Process for manufacturing semiconductor integrated circuit device | Electricity | 13 | Expired |
| US7313026B2 | Semiconductor device | Physics | 12 | Expired |
| US7601581B2 | Method of manufacturing a semiconductor device | Electricity | 10 | Active |
| US6576512B2 | Method of manufacturing an EEPROM device | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6559012B2 | Method for manufacturing semiconductor integrated circuit device having floating gate and deposited film | Electricity | 9 | Expired |
| US7321839B2 | Method and apparatus for calibration of camera system, and method of manufacturing camera system | Electricity | 7 | Active |
| US7119406B2 | Semiconductor integrated circuit device having deposited layer for gate insulation | Electricity | 6 | Expired |
| US9437736B2 | Non-volatile semiconductor memory device | Electricity | 6 | Active |
| US6373897B1 | Moving quantity detection apparatus and method | Physics | 6 | Expired |
| US8351254B2 | Semiconductor device | Physics | 6 | Active |
| US9502109B2 | Non-volatile semiconductor storage device | Physics | 6 | Active |
| US6908837B2 | Method of manufacturing a semiconductor integrated circuit device including a gate electrode having a salicide layer thereon | Emerging Cross-Sectional Technologies | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.