Semiconductor wafer, implantation apparatus for implanting protons and method for forming a semiconductor device
US10074715B2 · kind B2 · utility
1Cited by
3References
19Claims
0Family size
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Key dates
| Filing date | Sep 8, 2016 |
| Grant date | Sep 11, 2018 |
| Priority date | — |
| Expiry date | Sep 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device includes determining at least one electrical parameter for each semiconductor device of a plurality of semiconductor devices to be formed in a semiconductor wafer. The method further includes implanting doping ions into device areas of the semiconductor wafer used for forming the plurality of semiconductor devices with laterally varying implantation doses based on the at least one electrical parameter of the plurality of semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.