Inventor · Villach, AT

Werner Schustereder

55Patents
4h-index
72Co-inventors
65Inventor score

Filing activity: Jul 18, 2012 → Oct 5, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US9613805B1 Method for forming a semiconductor device Electricity 7 Active
US9012980B1 Method of manufacturing a semiconductor device including proton irradiation and semiconductor device including charge compensation structure Electricity 5 Active
US10903078B2 Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor device Electricity 5 Active
US9564495B2 Semiconductor device with a semiconductor body containing hydrogen-related donors Electricity 4 Active
US8710620B2 Method of manufacturing semiconductor devices using ion implantation Electricity 4 Active
US8859409B2 Semiconductor component comprising a dopant region in a semiconductor body and a method for producing a dopant region in a semiconductor body Electricity 2 Active
US10109489B2 Method for producing a superjunction device Electricity 2 Active
US10096677B2 Methods for forming a semiconductor device and a semiconductor device Electricity 2 Active
US10366895B2 Methods for forming a semiconductor device using tilted reactive ion beam Electricity 1 Active
US10128328B2 Method of manufacturing semiconductor devices and semiconductor device containing hydrogen-related donors Electricity 1 Active
US9812563B2 Transistor with field electrodes and improved avalanche breakdown behavior Electricity 1 Active
US9105487B2 Super junction semiconductor device Electricity 1 Active
US10679855B2 Method for producing a superjunction device Electricity 1 Active
US11171230B2 Semiconductor device and method for manufacturing a semiconductor device Electricity 1 Active
US10573533B2 Method of reducing a sheet resistance in an electronic device, and an electronic device Electricity 1 Active
US10083835B2 Forming electrode trenches by using a directed ion beam and semiconductor device with trench electrode structures Electricity 1 Active
US9825131B2 Method of manufacturing semiconductor devices and semiconductor device containing oxygen-related thermal donors Electricity 1 Active
US10037887B2 Method for implanting ions into a semiconductor substrate and an implantation system Electricity 1 Active
US9312135B2 Method of manufacturing semiconductor devices including generating and annealing radiation-induced crystal defects Electricity 1 Active
US11195695B2 Ion implantation method, ion implantation apparatus and semiconductor device Electricity 1 Active
US9972704B2 Method for forming a semiconductor device and a semiconductor device Electricity 1 Active
US10074715B2 Semiconductor wafer, implantation apparatus for implanting protons and method for forming a semiconductor device Electricity 1 Active
US9412824B2 Semiconductor component having a dopant region formed by a dopant composed of an oxygen/vacancy complex Electricity 1 Active
US10622268B2 Apparatus and method for ion implantation Electricity 0 Active
US10002930B2 Forming a contact layer on a semiconductor body Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.