Manufacturing method of MEMS chip
US10077188B2 · kind B2 · utility
1Cited by
7References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2017 |
| Grant date | Sep 18, 2018 |
| Priority date | — |
| Expiry date | Jan 13, 2037 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/053
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of manufacturing a MEMS chip includes: providing a silicon substrate layer, the silicon substrate layer comprising a front surface configured to perform a MEMS process and a rear surface opposite to the front surface; growing a first oxidation layer mainly made of SiO2 on the rear surface of the silicon substrate layer by performing a thermal oxidation process; and depositing a first thin film layer mainly made of silicon nitride on the first oxidation layer by performing a low pressure chemical vapor deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.