Composition for layered transition metal chalcogenide compound layer and method of forming layered transition metal chalcogenide compound layer
US10079144B2 · kind B2 · utility
18Cited by
7References
21Claims
0Family size
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Key dates
| Filing date | Apr 21, 2016 |
| Grant date | Sep 18, 2018 |
| Priority date | — |
| Expiry date | Jun 24, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02664
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a composition for forming a layered transition metal chalcogenide compound layer and a method of forming a layered transition metal chalcogenide compound layer by using the composition. The composition includes at least one of a transition metal precursor represented by Formula 1 and a chalcogenide precursor represented by Formula 2. Ma(R1)6-b-c(H)b(R2)c [Formula 1]
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.