Light-erasable embedded memory device and method of manufacturing the same
US10079204B2 · kind B2 · utility
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2References
14Claims
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Key dates
| Filing date | Jun 29, 2017 |
| Grant date | Sep 18, 2018 |
| Priority date | — |
| Expiry date | Jun 29, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/26
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A light-erasable embedded memory device and a method for manufacturing the same are provided in the present invention. The light-erasable embedded memory device includes a substrate with a memory region and a core circuit region, a floating gate on the memory region of the substrate, at least two light-absorbing films above the floating gate, wherein each light-absorbing film is provided with at least one dummy via hole overlapping the floating gate, and a dielectric layer on each light-absorbing film and filling up the dummy via holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.