Image sensor pixels with light guides and light shield structures
US10079256B2 · kind B2 · utility
0Cited by
14References
18Claims
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Key dates
| Filing date | Sep 23, 2016 |
| Grant date | Sep 18, 2018 |
| Priority date | — |
| Expiry date | Sep 23, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8027
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A front-side illuminated image sensor with an array of image sensor pixels is provided. Each image pixel may include a photodiode, transistor gate structures, shallow trench isolation structures, and other associated pixel circuits formed in a semiconductor substrate. Buried light shielding structures that are opaque to light may be formed over regions of the substrate to prevent the transistor gate structures, shallow trench isolation structures, and the other associated pixel circuits from being exposed to stray light. Buried light shielding structures formed in this way can help reduce optical pixel crosstalk.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.