Semiconductor devices and methods for forming a semiconductor device
US10079281B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2017 |
| Grant date | Sep 18, 2018 |
| Priority date | — |
| Expiry date | Feb 16, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device includes incorporating dopants of a first conductivity type into a nearby body region portion of a semiconductor substrate having a base doping of the first conductivity type. The incorporation of the dopants of the first conductivity type is masked by a mask structure at at least part of an edge region of the semiconductor substrate. The method further includes forming a body region of a transistor structure of a second conductivity type in the semiconductor substrate. The nearby body region portion of the semiconductor substrate is located adjacent to the body region of the transistor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.