Semiconductor device and method of fabricating the same
US10079305B2 · kind B2 · utility
19Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2015 |
| Grant date | Sep 18, 2018 |
| Priority date | — |
| Expiry date | Jan 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
Abstract
Provided are a semiconductor device and a method of fabricating the same. The device may include an active pattern protruding from a substrate, gate structures crossing the active pattern, and a source/drain region provided between adjacent ones of the gate structures. The source/drain region may include a source/drain epitaxial layer in a recessed region, which is formed in the active pattern between the adjacent ones of the gate structures. Further, an impurity diffusion region may be provided in the active pattern to enclose the source/drain epitaxial layer along inner surfaces of the recessed region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.