Oxide material and semiconductor device
US10079309B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2016 |
| Grant date | Sep 18, 2018 |
| Priority date | — |
| Expiry date | Jun 10, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2002/72
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.