Motoki NAKASHIMA
52Patents
7h-index
43Co-inventors
68Inventor score
Filing activity: Dec 22, 2006 → Aug 2, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8454748B2 | Method of calculating carrier mobility | Emerging Cross-Sectional Technologies | 18 | Active |
| US9382611B2 | Sputtering target, method for manufacturing sputtering target, and method for forming thin film | Chemistry; Metallurgy | 15 | Active |
| US8889477B2 | Method for forming thin film utilizing sputtering target | Chemistry; Metallurgy | 13 | Active |
| US9653613B2 | Semiconductor device and manufacturing method thereof | Electricity | 11 | Active |
| US9368633B2 | Oxide material and semiconductor device | Chemistry; Metallurgy | 9 | Active |
| US9954115B2 | Semiconductor device and method for manufacturing the same | Electricity | 8 | Active |
| US9130048B2 | Method for manufacturing a thin film semiconductor device | Electricity | 7 | Active |
| US9437428B2 | Method of manufacturing a semiconductor device having an oxide semiconductor layer with increased hydrogen concentration | Electricity | 7 | Active |
| US9443987B2 | Semiconductor device | Electricity | 7 | Active |
| US9466728B2 | Semiconductor device and method for manufacturing the same | Electricity | 5 | Active |
| US11024725B2 | Semiconductor device including metal oxide film | Emerging Cross-Sectional Technologies | 5 | Active |
| US10079309B2 | Oxide material and semiconductor device | Chemistry; Metallurgy | 5 | Active |
| US10269979B2 | Semiconductor device and method for manufacturing the same | Electricity | 5 | Active |
| US9825181B2 | Transistor, circuit, semiconductor device, display device, and electronic device | Physics | 3 | Active |
| US11063066B2 | C-axis alignment of an oxide film over an oxide semiconductor film | Electricity | 2 | Active |
| US10658517B2 | Semiconductor device and method for manufacturing the same | Electricity | 2 | Active |
| US9816173B2 | Semiconductor device and manufacturing method thereof | Electricity | 2 | Active |
| US10304859B2 | Semiconductor device having an oxide film on an oxide semiconductor film | Electricity | 2 | Active |
| US11843004B2 | Semiconductor device having specified relative material concentration between In—Ga—Zn—O films | Electricity | 1 | Active |
| US8604545B2 | Semiconductor device having single crystal silicon layer with local maximum of carbon concentration and shoulder peak of hydrogen concentration | Electricity | 1 | Active |
| US11081326B2 | Sputtering target and method for manufacturing the same | Electricity | 1 | Active |
| US8975634B2 | Semiconductor device including oxide semiconductor film | Electricity | 1 | Active |
| US9331206B2 | Oxide material and semiconductor device | Electricity | 1 | Active |
| US12002876B2 | Semiconductor device | Emerging Cross-Sectional Technologies | 0 | Active |
| US10734413B2 | Metal oxide and semiconductor device | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.