Three-terminal non-volatile multi-state memory for cognitive computing applications
US10079341B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2017 |
| Grant date | Sep 18, 2018 |
| Priority date | — |
| Expiry date | Mar 13, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/55
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A three-terminal non-volatile multi-state device based on mobile ion induced electrical resistivity change is provided. The three-terminal non-volatile multi-state memory device includes a substrate having a first electrode and a second electrode therein. The three-terminal non-volatile multi-state memory device further includes a mobile ion including resistor layer disposed over the first electrode, the second electrode, and part of the substrate. The three-terminal non-volatile multi-state memory device also includes a third electrode formed over the mobile ion including resistor layer. The three-terminal non-volatile multi-state memory device provides multi-level states determined by an electrical resistivity the mobile ion including resistor layer which changes the electrical resistivity based on the mobile ion concentration in the material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.