Gas-sensitive hall device

US10082484B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Werner Breuer · Krefeld, DE
• Markus Eckinger · Regenstauf, DE

Key dates

• Filing date: Aug 25, 2016
• Grant date: Sep 25, 2018
• Expiry date: Aug 25, 2036

Classification

• Technology area (CPC G): Physics
• CPC primary: G01R33/072
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A chemically sensitive Hall device is described herein. In accordance with one example of the present invention, a Hall device comprises a substrate and a chemically sensitive layer arranged on the substrate. The chemically sensitive layer is able to interact with atoms or molecules of a gaseous or liquid fluid. Force electrodes are connected to the chemically sensitive layer for feeding a sensor current through the chemically sensitive layer along a first direction. Sense electrodes are connected to the chemically sensitive layer to tap a Hall voltage at the chemically sensitive layer along a second direction. A back gate is arranged on or integrated in the substrate and is isolated from the chemically sensitive layer by an isolation layer.