Composition and method for lithography patterning
US10082734B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2015 |
| Grant date | Sep 25, 2018 |
| Priority date | — |
| Expiry date | Feb 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3081
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An anti-reflective coating (ARC) composition for use in lithography patterning and a method of using the same is disclosed. In an embodiment, the ARC composition comprises a polymer having a chromophore; an acid labile group (ALG), more than 5% by weight; a thermal acid generator; and an optional crosslinker. The method includes applying the ARC composition over a substrate; crosslinking the polymer to form an ARC layer; cleaving the ALG of the ARC layer to reduce a film density of the ARC layer; forming a resist layer over the ARC layer, patterning the resist layer, and etching the ARC layer. Due to reduced film density, the ARC layer has a high etching rate, thereby preserving the critical dimension (CD) of the resist pattern during the etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.