Semiconductor structure with resist protective oxide on isolation structure and method of manufacturing the same
US10083860B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2017 |
| Grant date | Sep 25, 2018 |
| Priority date | — |
| Expiry date | Apr 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0135
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor structure includes; (i) forming an isolation structure in a semiconductor substrate, the isolation structure electrically isolating device regions of the semiconductor substrate; (ii) forming a gate structure extending from one of the device regions to the isolation structure; (iii) forming a resist protective oxide layer overlaying the gate structure and the isolation structure; and (iv) patterning the resist protective oxide layer to form a patterned resist protective oxide that covers at least a portion of the isolation structure and a portion of the gate structure on the isolation structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.