Growth substrate for forming optoelectronic devices, method for manufacturing such a substrate, and use of the susbstrate, in particular in the field of micro-display screens
US10084011B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2017 |
| Grant date | Sep 25, 2018 |
| Priority date | — |
| Expiry date | Apr 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters comprises providing a substrate including a medium, a flow layer disposed on the medium, and a plurality of strained crystalline semiconductor islands having an initial lattice parameter arranged on the flow layer. The strained semiconductor islands are selectively treated so as to form a first group of strained islands having a first lateral expansion potential, and a second group of strained islands having a second lateral expansion potential that is different from the first lateral expansion potential. The substrate is heat treated at a temperature at or above a glass transition temperature of the flow layer to cause differentiated relaxation of the islands of the first and second groups, such that a lattice parameter of the first group of relaxed islands differs from a lattice parameter of the second group of relaxed islands.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.