Semiconductor device
US10084049B2 · kind B2 · utility
3Cited by
10References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2017 |
| Grant date | Sep 25, 2018 |
| Priority date | — |
| Expiry date | Aug 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a substrate having an active region; a gate structure disposed in the active region; source/drain regions respectively formed within portions of the active region disposed on both sides of the gate structure; a metal silicide layer disposed on a surface of each of the source/drain regions; and contact plugs disposed on the source/drain regions and electrically connected to the source/drain regions through the metal silicide layer, respectively. The metal silicide layer is formed so as to have a monocrystalline structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.