Inventor · Pocheon-si, KR

Cho-eun Lee

21Patents
5h-index
34Co-inventors
61Inventor score

Filing activity: Dec 19, 2014 → Jul 5, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US10297601B2 Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same Electricity 15 Active
US9761719B2 Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrations Electricity 14 Active
US9397219B2 Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices Electricity 7 Active
US10672764B2 Integrated circuit semiconductor devices including a metal oxide semiconductor (MOS) transistor Electricity 6 Active
US9368495B2 Semiconductor devices having bridge layer and methods of manufacturing the same Electricity 5 Active
US11145720B2 Semiconductor device Electricity 3 Active
US10084049B2 Semiconductor device Electricity 3 Active
US10008600B2 Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrations Electricity 2 Active
US11728434B2 Semiconductor device Electricity 2 Active
US9735158B2 Semiconductor devices having bridge layer and methods of manufacturing the same Electricity 2 Active
US10784379B2 Semiconductor device including a shared semiconductor pattern having faceted sidewalls and method for fabricating the same Electricity 2 Active
US9972716B2 Semiconductor devices Electricity 2 Active
US10147723B2 Semiconductor devices having bridge layer and methods of manufacturing the same Electricity 0 Active
US12027586B2 Semiconductor device Electricity 0 Active
US9553192B2 Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices Electricity 0 Active
US12245440B2 Semiconductor device Electricity 0 Active
US10504992B2 Semiconductor device and method for fabricating the same Electricity 0 Active
US9755076B2 Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices Electricity 0 Active
US11469237B2 Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same Electricity 0 Active
US10128112B2 Method of fabricating semiconductor device Electricity 0 Active
US11735631B2 Semiconductor device Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.