Semiconductor device and method for manufacturing the same
US10084052B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2015 |
| Grant date | Sep 25, 2018 |
| Priority date | — |
| Expiry date | Oct 5, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device, a gate insulating film is provided with a multi-layer structure including a first insulating film and a second insulating film. The first insulating film is formed of an insulating film containing an element having an oxygen binding force larger than that of an element contained in the second insulating film, and the total charge amount is increased. Specifically, by performing oxygen anneal, it is possible to perform the step of supplying oxygen into an aluminum oxide film and increase the total charge amount. This allows a negative fixed charge density in the gate insulating film in the vicinity of an interface with a GaN layer to be set to a value of not less than 2.5×1011 cm−2 and allows a normally-off element to be reliably provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.