Inventor · Yokohama, JP

Yoshinori Tsuchiya

64Patents
8h-index
36Co-inventors
74Inventor score

Filing activity: Sep 27, 2005 → Aug 2, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US7563678B2 Semiconductor device and method of manufacturing the same Electricity 16 Active
US7485936B2 Semiconductor device and method of manufacturing the same Electricity 13 Expired
US7514753B2 Semiconductor device Electricity 11 Active
US7964489B2 Semiconductor device Electricity 11 Active
US7807990B2 Semiconductor device Electricity 11 Active
US8120117B2 Semiconductor device with metal gate Electricity 10 Active
US7667273B2 Semiconductor device and method for manufacturing the same Electricity 8 Active
US7807538B2 Method of forming a silicide layer while applying a compressive or tensile strain to impurity layers Electricity 8 Active
US8367507B1 Manufacturing method of semiconductor device Electricity 7 Active
US7429777B2 Semiconductor device with a gate electrode having a laminate structure Electricity 5 Expired
US7391085B2 Semiconductor device Electricity 5 Expired
US7456096B2 Method of manufacturing silicide layer for semiconductor device Electricity 4 Active
US7977182B2 Method of manufacturing MISFET with low contact resistance Electricity 4 Active
US7541657B2 Semiconductor device and method for manufacturing the same Electricity 3 Active
US7642165B2 Semiconductor device and fabrication method thereof Electricity 3 Active
US7429776B2 Semiconductor device and method for manufacturing the same Electricity 3 Expired
US7863695B2 Complementary MISFET semiconductor device having an atomic density ratio aluminum/lanthanum (Al/La) in the gate insulating layer of PMIS is larger than that of the NMIS Electricity 3 Active
US10084052B2 Semiconductor device and method for manufacturing the same Electricity 2 Active
US8129792B2 Semiconductor device and method for manufacturing the same Electricity 2 Active
US10381469B2 Semiconductor device and method of manufacturing the same Electricity 2 Active
US7986014B2 Semiconductor device Electricity 2 Active
US8174080B2 Semiconductor device Electricity 2 Active
US8053300B2 Semiconductor device Electricity 2 Active
US7763946B2 Semiconductor device and method for manufacturing the same Electricity 2 Active
US7576397B2 Semiconductor device Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.