Fin field effect transistor (FinFET) device structure with stop layer and method for forming the same
US10084085B2 · kind B2 · utility
10Cited by
52References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2015 |
| Grant date | Sep 25, 2018 |
| Priority date | — |
| Expiry date | Jul 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A FinFET device structure and method for forming the same are provided. The FinFET device structure includes a stop layer formed over a substrate and a fin structure formed over the stop layer. The FinFET device structure includes a gate structure formed over the fin structure and a source/drain (S/D) structure adjacent to the gate structure. A bottom surface of the S/D structure is located at a position that is higher than or level with a bottom surface of the stop layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.