Chih-Han Lin
415Patents
12h-index
71Co-inventors
85Inventor score
Filing activity: Apr 7, 2006 → Jun 24, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9331074B1 | Semiconductor device and manufacturing method thereof | Electricity | 66 | Active |
| US9627379B1 | FinFET devices and methods of forming the same | Electricity | 26 | Active |
| US9461044B1 | Fin field effect transistor, semiconductor device and fabricating method thereof | Electricity | 25 | Active |
| US9245883B1 | Method of making a FinFET device | Electricity | 23 | Active |
| US9837510B2 | Method for manufacturing semiconductor fin structure with extending gate structure | Electricity | 20 | Active |
| US9490176B2 | Method and structure for FinFET isolation | Electricity | 18 | Active |
| US9929242B2 | Semiconductor device and manufacturing method thereof | Electricity | 17 | Active |
| US9041125B2 | Fin shape for fin field-effect transistors and method of forming | Electricity | 15 | Active |
| US9953874B2 | FinFETs and methods of forming FinFETs | Electricity | 14 | Active |
| US9496363B1 | FinFET isolation structure and method for fabricating the same | Electricity | 13 | Active |
| US9627375B2 | Indented gate end of non-planar transistor | Electricity | 13 | Active |
| US10269802B2 | Semiconductor device and manufacturing method thereof | Electricity | 13 | Active |
| US9559100B2 | Semiconductor device and manufacturing method thereof | Electricity | 12 | Active |
| US9704752B1 | Fin field effect transistor and method for fabricating the same | Electricity | 12 | Active |
| US9450099B1 | Structure and formation method of semiconductor device structure | Electricity | 12 | Active |
| US9577036B1 | FinFET isolation structure and method for fabricating the same | Electricity | 12 | Active |
| US9917085B2 | Metal gate isolation structure and method forming same | Electricity | 11 | Active |
| US10163640B1 | Gate isolation plugs structure and method | Electricity | 11 | Active |
| US9818649B2 | Method and structure for FinFET isolation | Electricity | 10 | Active |
| US9627316B1 | Field effect transistor devices having interconnect structures and manufacturing method thereof | Electricity | 10 | Active |
| US10084085B2 | Fin field effect transistor (FinFET) device structure with stop layer and method for forming the same | Electricity | 10 | Active |
| US9704751B1 | Semiconductor device and method for fabricating the same | Electricity | 10 | Active |
| US9570567B1 | Source and drain process for FinFET | Electricity | 9 | Active |
| US9461043B1 | Semiconductor device and manufacturing method thereof | Electricity | 9 | Active |
| US9659813B1 | Interconnection and manufacturing method thereof | Electricity | 9 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.