Enhanced coercivity in MTJ devices by contact depth control
US10084127B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2017 |
| Grant date | Sep 25, 2018 |
| Priority date | — |
| Expiry date | Apr 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device includes a magnetic memory stack including a bottom electrode and having a hard mask formed thereon. An encapsulation layer is formed over sides of the magnetic memory stack and has a thickness adjacent to the sides formed on the bottom electrode. A dielectric material is formed over the encapsulation layer and is removed from over the hard mask and gapped apart from the encapsulation layer on the sides of the magnetic memory stack to form trenches between the dielectric material and the encapsulation layer at the sides of the magnetic memory stack. A top electrode is formed over the hard mask and in the trenches such that the top electrode is spaced apart from the bottom electrode by at least the thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.