Inventor · White Plains, NY, US

Nathan P. Marchack

64Patents
5h-index
49Co-inventors
64Inventor score

Filing activity: Oct 22, 2014 → Aug 5, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US9450180B1 Structure and method to reduce shorting in STT-MRAM device Electricity 62 Active
US9502640B1 Structure and method to reduce shorting in STT-MRAM device Electricity 11 Active
US9515252B1 Low degradation MRAM encapsulation process using silicon-rich silicon nitride film Electricity 9 Active
US9490164B1 Techniques for forming contacts for active BEOL Electricity 7 Active
US9705077B2 Spin torque MRAM fabrication using negative tone lithography and ion beam etching Electricity 7 Active
US9660179B1 Enhanced coercivity in MTJ devices by contact depth control Electricity 5 Active
US10583282B2 Neuro-stem cell stimulation and growth enhancement with implantable nanodevice Human Necessities 5 Active
US10770652B2 Magnetic tunnel junction (MTJ) bilayer hard mask to prevent redeposition Electricity 4 Active
US11189782B2 Multilayered bottom electrode for MTJ-containing devices Electricity 3 Active
US10957738B2 Magnetic random access memory (MRAM) structure with small bottom electrode Electricity 3 Active
US10892403B2 Structured bottom electrode for MTJ containing devices Electricity 2 Active
US9728717B2 Magnetic tunnel junction patterning using low atomic weight ion sputtering Electricity 2 Active
US10777735B2 Contact via structures Electricity 2 Active
US9673386B2 Structure and method to reduce shorting in STT-MRAM device Electricity 2 Active
US9214355B2 Molecular radical etch chemistry for increased throughput in pulsed plasma applications Electricity 2 Active
US11980039B2 Wide-base magnetic tunnel junction device with sidewall polymer spacer Electricity 2 Active
US10937945B2 Structured pedestal for MTJ containing devices Physics 1 Active
US11056643B2 Magnetic tunnel junction (MTJ) hard mask encapsulation to prevent redeposition Electricity 1 Active
US9691972B1 Low temperature encapsulation for magnetic tunnel junction Electricity 1 Active
US10686124B2 Contact via structures Electricity 1 Active
US10840441B2 Diamond-like carbon hardmask for MRAM Electricity 1 Active
US10084127B2 Enhanced coercivity in MTJ devices by contact depth control Electricity 1 Active
US10388857B2 Spin torque MRAM fabrication using negative tone lithography and ion beam etching Electricity 1 Active
US9947863B2 Structure and method to reduce shorting in STT-MRAM device Electricity 1 Active
US10593870B2 Sidewall image transfer on magnetic tunnel junction stack for magnetoresistive random-access memory patterning Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.