Resistance variable memory device with nanoparticle electrode and method of fabrication

US10084130B2 · kind B2 · utility

Assignee

• Ovonyx Memory Technology, LLC · US

Inventors

• Jun Liu · 红钢城街道, CN
• Kristy A. Campbell · Boise, US

Key dates

• Filing date: Nov 23, 2015
• Grant date: Sep 25, 2018
• Expiry date: Nov 23, 2035

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/773

Abstract

A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of forming the nanoparticle utilizes a template over the electrode or random deposition of the nanoparticle.