Ovonyx Memory Technology, LLC
57Patents
57Active
57Granted
53Portfolio score
Filing activity: Feb 16, 2011 → Jun 17, 2022
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9715419B2 | Selective reading of memory with improved accuracy | Physics | 4 | Active |
| US9711191B2 | Apparatus and methods to provide power management for memory devices | Physics | 4 | Active |
| US10074405B2 | Apparatus and methods to provide power management for memory devices | Physics | 4 | Active |
| US10585735B2 | Selective reading of memory with improved accuracy | Physics | 3 | Active |
| US9779811B2 | Apparatuses and methods for efficient write in a cross-point array | Physics | 3 | Active |
| US10573384B2 | Variable resistance memory with lattice array using enclosing transistors | Electricity | 3 | Active |
| US9496035B2 | Devices and methods to program a memory cell | Physics | 3 | Active |
| US10084130B2 | Resistance variable memory device with nanoparticle electrode and method of fabrication | Emerging Cross-Sectional Technologies | 2 | Active |
| US10658012B2 | Apparatus and methods to provide power management for memory devices | Physics | 2 | Active |
| US9748475B2 | Memory devices including phase change material elements | Electricity | 2 | Active |
| US10312437B2 | Memory devices including phase change material elements | Electricity | 2 | Active |
| US11114135B2 | Apparatus and methods to provide power management for memory devices | Physics | 2 | Active |
| US9715929B2 | Semiconductor memory devices including a memory array and related method incorporating different biasing schemes | Physics | 2 | Active |
| US10418091B2 | Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same | Electricity | 1 | Active |
| US10090048B2 | Semiconductor memory devices including a memory array and related method incorporating different biasing schemes | Physics | 1 | Active |
| US9520555B2 | Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact | Electricity | 1 | Active |
| US9747975B2 | Multi-level phase change memory | Emerging Cross-Sectional Technologies | 1 | Active |
| US9966349B2 | Semiconductor memory device structure | Electricity | 1 | Active |
| US11379286B2 | Selective reading of memory with improved accuracy | Physics | 0 | Active |
| US11789796B2 | Selective reading of memory with improved accuracy | Physics | 0 | Active |
| US9698345B2 | Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact cross references | Electricity | 0 | Active |
| US10770141B2 | Semiconductor memory devices including a memory array and related method incorporating different biasing schemes | Physics | 0 | Active |
| US9812179B2 | Techniques for reducing disturbance in a semiconductor memory device | Physics | 0 | Active |
| US10083752B2 | Apparatuses and methods for efficient write in a cross-point array | Physics | 0 | Active |
| US11031069B2 | Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.