Microelectromechanical system structure including thermal stability layer whose material has higher growth temperature, and method for fabricating the same
US10087072B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2016 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | Jul 22, 2036 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0735
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A microelectromechanical system structure and a method for fabricating the same are provided. A method for fabricating a MEMS structure includes the following steps. A first substrate is provided, wherein a transistor, a first dielectric layer and an interconnection structure are formed thereon. A second substrate is provided, wherein a second dielectric layer and a thermal stability layer are formed on the second substrate. The first substrate is bonded to the second substrate, and the second substrate removed. A conductive layer is formed within the second dielectric layer and electrically connected to the interconnection structure. The thermal stability layer is located between the conductive layer and the interconnection structure. A growth temperature of a material of the thermal stability layer is higher than a growth temperature of a material of the conductive layer and a growth temperature of a material of the interconnection structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.