Reusable nitride wafer, method of making, and use thereof
US10087550B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | May 16, 2017 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | May 16, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.