Patent · US Active

Non-volatile memory cell having pinch-off ferroelectric field effect transistor

US10090036B2 · kind B2 · utility

12Cited by

7References

16Claims

0Family size

Assignee

IMEC VZW · BE

Inventor

Jan Van Houdt · Bekkevoort, BE

Key dates

Filing date	Dec 20, 2016
Grant date	Oct 2, 2018
Priority date	—
Expiry date	Dec 20, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/689
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The disclosed technology relates generally to non-volatile memory devices, and more particularly to ferroelectric non-volatile memory devices. In one aspect, a non-volatile memory cell includes a pinch-off ferroelectric memory FET and at least one select device electrically connected in series to the pinch-off ferroelectric memory FET.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.