Jan Van Houdt
31Patents
12h-index
21Co-inventors
81Inventor score
Filing activity: Jun 21, 1993 → Dec 13, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6897517B2 | Multibit non-volatile memory and method | Physics | 129 | Expired |
| US6243293A | Contacted cell array configuration for erasable and programmable semiconductor memories | Physics | 54 | Expired |
| US6115285A | Device and method for multi-level charge/storage and reading out | Physics | 28 | Expired |
| US10211223B2 | Vertical ferroelectric memory device and a method for manufacturing thereof | Electricity | 25 | Active |
| US6044015A | Method of programming a flash EEPROM memory cell array optimized for low power consumption | Electricity | 24 | Expired |
| US5583810A | Method for programming a semiconductor memory device | Electricity | 20 | Expired |
| US6486509B1 | Non-volatile memory cell | Emerging Cross-Sectional Technologies | 15 | Expired |
| US6009013A | Contactless array configuration for semiconductor memories | Electricity | 14 | Expired |
| US5583811A | Transistor structure for erasable and programmable semiconductor memory devices | Electricity | 13 | Expired |
| US5969991A | Method of erasing a flash EEPROM memory cell array optimized for low power consumption | Electricity | 12 | Expired |
| US10211312B2 | Ferroelectric memory device and fabrication method thereof | Electricity | 12 | Active |
| US10090036B2 | Non-volatile memory cell having pinch-off ferroelectric field effect transistor | Electricity | 12 | Active |
| US10403627B2 | Memory device for a dynamic random access memory | Electricity | 9 | Active |
| US7232722B2 | Method of making a multibit non-volatile memory | Physics | 9 | Expired |
| US10418377B2 | Three-dimensional non-volatile semiconductor memory device having replacement gate | Electricity | 9 | Active |
| US7136306B2 | Single bit nonvolatile memory cell and methods for programming and erasing thereof | Physics | 8 | Expired |
| US6144586A | Methods of erasing a memory device and a method of programming a memory device for low-voltage and low-power applications | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6282124A | Method of erasing a flash EEPROM memory cell array optimized for low power consumption | Electricity | 6 | Expired |
| US6246612A | Methods of erasing a memory device and a method of programming a memory device for low-voltage and low-power applications | Emerging Cross-Sectional Technologies | 6 | Expired |
| US9847109B2 | Memory cell | Electricity | 4 | Active |
| US10522624B2 | V-grooved vertical channel-type 3D semiconductor memory device and method for manufacturing the same | Electricity | 3 | Active |
| US10672894B2 | Method of fabricating ferroelectric field-effect transistor | Electricity | 2 | Active |
| US5841697A | Contactless array configuration for semiconductor memories | General | 2 | Revoked |
| US11211108B2 | Ferroelectric memory device | Electricity | 1 | Active |
| US12376296B2 | Memory structures and methods of processing the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.