Plasma processing method and plasma processing device
US10090162B2 · kind B2 · utility
3Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2016 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | Nov 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Controllability of ion bombardment on a substrate is further improved to achieve uniformity of the etched substrate across the substrate surface.A plasma processing apparatus performs plasma generation and control of energy of ion bombardment on the substrate independently, generates plasma by continuous discharge or pulse discharge, and switches at least two bias powers having different frequencies, and alternately and repeatedly applies the at least two bias powers having different frequencies to a sample stage while the plasma is being generated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.