Semiconductor device with high thermal conductivity substrate and process for making the same
US10090172B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2016 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | Aug 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/3731
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a process of forming a semiconductor device with a high thermal conductivity substrate. According to an exemplary process, a semiconductor precursor including a substrate structure, a buffer structure over the substrate structure, and a channel structure over the buffer structure is provided. The channel structure has a first channel surface and a second channel surface, which is opposite the first channel surface, adjacent to the buffer structure, and has a first polarity. Next, a high thermal conductivity substrate with a thermal conductivity greater than 400 W/mK is formed over the first channel surface. A heat sink carrier is then provided over the high thermal conductivity substrate. Next, the substrate structure and the buffer structure are removed to provide a thermally enhanced semiconductor device with an exposed surface, which has the first polarity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.